不同晶体结构Gd2(MoO4)3:Eu3+荧光粉的合成及其发光性能研究

采用溶胶凝胶-燃烧法,柠檬酸为络合剂合成出系列Gd₂(MoO₄)₃:Eu³⁺荧光粉.利用X射线衍射(XRD)、扫描电子显微镜(SEM)和荧光光谱对样品的结构、形貌和发光性能进行了研究.XRD分析表明:稀土离子与柠檬酸为1:0.5时,800℃热处理获得单斜结构的Gd₂(MoO₄)₃:Eu³⁺荧光粉.单斜结构的Gd₂(MoO₄)₃:Eu³⁺荧光粉到正交结构的Gd₂(MoO₄)₃:Eu³⁺荧光粉的转换可以通过改变稀土离子与柠檬酸摩尔比和热处理温度等合成条件实现.Gd₂(MoO₄)₃:Eu³⁺荧光粉的形貌受合成条件的影响.荧光光谱研究表明:Gd₂(MoO₄)₃:Eu³⁺荧光粉的主发射峰位于616 nm处来自于Eu³⁺的⁵D₀→⁷F₂电偶极跃迁.正交结构的Gd₂(MoO₄)₃:Eu³⁺荧光粉发射强度明显高于单斜结构的荧光粉.计算⁵D₀→⁷F₂与⁵D₀→⁷F₁跃迁发射的相对强度比值表明:正交结构的Gd₂(MoO₄)₃:Eu³⁺中Eu³⁺局域环境的对称性较高。     

Investigation of unstable motion characteristics of vacuum arc cathode spots between transverse magnetic field contacts

With the improvement of the current level of power grids, the requirements of the opening level of the vacuum switches are also increasing. Vacuum arc cathode spots provide steam and electrons and, to a certain extent, determine the opening capacity of the vacuum switch. In this paper, a vacuum arc cathode spot research platform based on the de-mountable vacuum chamber is constructed. The characteristics of the vacuum arc cathode spots under the transverse magnetic field (TMF) contacts are assessed by a high-speed charge coupled device. The experimental results show that the cathode spot diffusion process can be divided into three processes through cathode spot distribution, arc voltage and current: initial diffusion stage of cathode spots, unstable motion stage of cathode spots, and extinguishing stage. The motion mode of cathode spots during unstable motion stage can be divided into cathode spots group stagnation (CSGS) to multi-cathode jet (MCJ) switch mode, cathode spots group motion (CSGM) to MCJ switch mode, CSGM mode, and MCJ mode. The effects of peak current and contact diameter on unstable motion mode were analysed.     

利用相位步进脉冲消除探头13C NMR背景信号

由静态探头线圈外有机材料产生的¹³C NMR背景信号强度大，化学位移范围广（δ_C 20~250），此背景信号在交叉极化实验中还可被增强，并随着样品信号的累积而累积，严重影响谱图分析.将相位步进脉冲引入交叉极化实验（称为PIPCP）中可以有效去除经交叉极化增强的¹³C NMR背景信号，但样品信号不受影响.这是由于经过相位步进脉冲后，线圈外相位严重畸变，而且线圈外锁定场强度急剧降低，来自探头材料的¹³C NMR背景信号无法有效地进行交叉极化.而对于被测样品甘氨酸来说，由于I核和S核之间强烈的偶极耦合作用，所加相位步进脉冲对锁定场强度的影响只有1.4%.     

Self-Assembly Anisotropic Magnetic Nanowire Films Induced by External Magnetic Field

Self-assembly generated materials induced by an external magnetic field have attracted considerable interest following the development of nanodevices. However, the fabrication of macroscopic and anisotropic magnetic films at the nanoscale remains a challenge. Here, anisotropic magnetic films are successfully prepared using a solution-based nanowire assembly strategy under a magnetic field. The assembly process is manipulated by changing the thickness of silica shell coated on the surface of magnetic nanowires. The anisotropic magnetic films show highly anisotropic magnetization under different angles of magnetic field and better magnetization properties than that of disordered magnetic films. The well-defined nanowire arrays enable magnetization anisotropic property which may be useful in the magnetic energy conversion technologies and biomedical sciences which lie far beyond those achievable with traditional magnetic materials.     

酰胺功能化修饰琼脂糖/硅胶复合材料的制备及吸附性能研究

采用溶胶-凝胶法,以氧化琼脂糖和四甲氧基硅烷为前驱体,通过水解、缩聚反应制得琼脂糖/硅胶复合材料,进一步利用开环、"巯-烯"点击和酰胺化反应对复合材料实现酰胺基团功能化修饰.借助红外光谱(FT-IR)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)对所制备复合材料进行结构、组成和微观形貌表征.以制备的酰胺功能化修饰琼脂糖/硅胶复合材料为吸附剂,探讨其对莱克多巴胺的吸附过程,实验考察了溶剂、吸附时间、莱克多巴胺的初始浓度等对吸附的影响.结果表明:经过修饰反应酰胺基团成功接枝到琼脂糖/硅胶复合材料,该材料颗粒呈球形,粒径在2～3μm之间;复合材料对莱克多巴胺表现出良好的吸附性能,吸附过程50 min达到平衡,适合准二级动力学特征,属化学吸附,吸附等温线符合Freundlich模型;复合材料经过6次吸附解析,再生后对莱克多巴胺的吸附率仅有小幅下降,表明具有较好的循环再生吸附能力.     

Metastable states in high carbon C–(Fe,Ni, Co) films obtained by three-electrode ion-plasma sputtering

Abstract

The effect of ion-plasma deposition on the structure of high-carbon films (at. %) Fe–(20–84) % С, Co–(5–52) % С, Ni–(7–61) % С was investigated. The lattice periods and crystallite sizes of nonequilibrium phases in the as-deposited state and after heating are determined. The temperatures of the beginning and end of the decay of metastable phases during heating at a constant speed are established. The transition from an amorphous to an equilibrium crystalline state in Fe–C films passes through the stage of formation and subsequent decomposition of an intermediate, metastable hcp phase of variable composition. The electrical and hysteretic magnetic properties of the films were measured in the as-deposited state and after heat treatment. The compositions and conditions for producing films with low values of the temperature coefficient of electrical resistance and high coercive force are established. Thus, high-carbon films of Ni–61% C in the as-depoteted state and Fe–69% C films after heating to 900?K are characterized by small TCR values (± 10^?6 К^?1) over a wide temperature range.     

均匀磁场下碳离子笔形束的剂量变化分析及位置修正方法

分析外加均匀磁场对于碳离子笔形束剂量分布的影响,并考虑修正这种影响,为磁共振成像引导碳离子放射治疗的临床应用提供指导。本文利用蒙特卡罗方法模拟计算了不同能量碳离子笔形束在不同强度磁场下的剂量分布情况,发现垂直于碳离子束入射方向的均匀磁场对于碳离子笔形束射程缩短的影响很小,磁场对碳离子束的主要影响是引起束流横向偏转,特别是碳离子束布拉格峰位置的横向侧移。横向侧移程度与碳离子束的能量和磁场强度相关,根据模拟结果,得到了一个计算碳离子束布拉格峰在磁场中相对横向偏转的方程,并提出一种校正外加磁场引起的碳离子束布拉格峰横移的角度修正方法。这些结果可用于指导磁共振图像引导碳离子放射治疗计划系统的研发。     

In原子在GaAs(001)表面的成核与扩散研究

近年来,半导体量子点特别是InAs量子点的基本物理性质和潜在应用得到了广泛研究。许多研究者利用InAs量子点结构的改变以调制其光电特性。本文采用液滴外延法在GaAs(001)表面沉积了不同沉积量的In(3 ML、4 ML、5 ML),以研究In的成核机制和表面扩散。实验发现,随着In沉积量的增加,液滴尺寸(包括直径、高度)明显增大。不仅如此,在相同的衬底温度下,沉积量越大,液滴密度越大。利用经典成核理论,计算了GaAs(001)表面In液滴形成的临界厚度为0.57 ML,计算的结果与已报道的实验一致。从In原子在表面的迁移和扩散,以及衬底中Ga和液滴中的In之间的原子互混原理解释了In液滴形成和形貌演化的机理。实验中得到的In液滴临界厚度以及In液滴在GaAs(001)上成核机理,可以为制备InAs量子点提供实验指导。